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This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios of 10⁶–10⁸and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.85 eV, and the ideality factor decreased from 4.29 to 1.95 with increasing temperature, ascribed to the inhomogeneous metal/AlN interface. This work demonstrates the potential of AlN as an ultra-wide bandgap semiconductor for developing multi-kV AlN high-voltage and high-power devices.

 

Ultrawide bandgap β-(AlxGa1−x)2O3 vertical Schottky barrier diodes on (010) β-Ga2O3 substrates are demonstrated. The β-(AlxGa1−x)2O3 epilayer has an Al composition of 21% and a nominal Si doping of 2 × 1017 cm−3 grown by molecular beam epitaxy. Pt/Ti/Au has been employed as the top Schottky contact, whereas Ti/Au has been utilized as the bottom Ohmic contact. The fabricated devices show excellent rectification with a high on/off ratio of ∼109, a turn-on voltage of 1.5 V, and an on-resistance of 3.4 mΩ cm2. Temperature-dependent forward current-voltage characteristics show effective Schottky barrier height varied from 0.91 to 1.18 eV while the ideality factor from 1.8 to 1.1 with increasing temperatures, which is ascribed to the inhomogeneity of the metal/semiconductor interface. The Schottky barrier height was considered a Gaussian distribution of potential, where the extracted mean barrier height and a standard deviation at zero bias were 1.81 and 0.18 eV, respectively. A comprehensive analysis of the device leakage was performed to identify possible leakage mechanisms by studying temperature-dependent reverse current-voltage characteristics. At reverse bias, due to the large Schottky barrier height, the contributions from thermionic emission and thermionic field emission are negligible. By fitting reverse leakage currents at different temperatures, it was identified that Poole–Frenkel emission and trap-assisted tunneling are the main leakage mechanisms at high- and low-temperature regimes, respectively. Electrons can tunnel through the Schottky barrier assisted by traps at low temperatures, while they can escape these traps at high temperatures and be transported under high electric fields. This work can serve as an important reference for the future development of ultrawide bandgap β-(AlxGa1−x)2O3 power electronics, RF electronics, and ultraviolet photonics.

 

Recent advances in the causal analysis can accelerate incident response time, but only after a causal graph of the attack has been constructed. Unfortunately, existing causal graph generation techniques are mainly offline and may take hours or days to respond to investigator queries, creating greater opportunity for attackers to hide their attack footprint, gain persistency, and propagate to other machines. To address that limitation, we present Swift, a threat investigation system that provides high-throughput causality tracking and real-time causal graph generation capabilities. We design an in-memory graph database that enables space-efficient graph storage and online causality tracking with minimal disk operations. We propose a hierarchical storage system that keeps forensically-relevant part of the causal graph in main memory while evicting rest to disk. To identify the causal graph that is likely to be relevant during the investigation, we design an asynchronous cache eviction policy that calculates the most suspicious part of the causal graph and caches only that part in the main memory. We evaluated Swift on a real-world enterprise to demonstrate how our system scales to process typical event loads and how it responds to forensic queries when security alerts occur. Results show that Swift is scalable, modular, and answers forensic queries in real-time even when analyzing audit logs containing tens of millions of events. 

Autoimmune uveitis is a leading cause of blindness with a complex etiology. Obesity is considered a chronic disease with a connection with autoimmune diseases through systemic inflammation. However, an obesity and autoimmune disease connection is not consistently true in rodent models of autoimmune disease. A mouse model of human autoimmune uveitis, experimental autoimmune uveitis (EAU) has been used to better understand the immunobiology of uveitis. In this study, we assessed EAU in a high-fat diet (HFD) obesity model and found that the EAU severity is significantly higher in wild-type mice, but not in HFD melanocortin 5 receptor deficient mice. We find a decrease in CD11b+F4/80+Ly-6CloLy-6G+ Mϕs, previously shown to be suppressive, and an enhancement of a Th1 response at the onset of EAU in obese mice. We further demonstrate that at recovery of EAU, obese mice lack regulatory immunity that provides protection from EAU. This report demonstrates that obesity exacerbates autoimmune uveitis and inhibits the promotion of post-EAU regulatory immunity through the melanocortin 5 receptor. The implication of this work is that obesity may contribute to the prevalence of autoimmune uveitis.

 

The optical activity of Raman scattering provides insight into the absolute configuration and conformation of chiral molecules. Applications of Raman optical activity (ROA) are limited by long integration times due to a relatively low sensitivity of the scattered light to chirality (typically 10^-3 to 10^-5). We apply ROA techniques to hyper-Raman scattering using incident circularly polarized light and a right-angle scattering geometry. We explore the sensitivity of hyper- Raman scattering to chirality as compared to spontaneous Raman optical activity. Using the excitation wavelength at around 532 nm, the photobleaching is minimized, while the hyper-Raman scattering benefits from the electronic resonant enhancement. For S/R-2-butanol and L/D-tartaric acid, we were unable to detect the hyper-Raman optical activity at the sensitivity level of 1%. We also explored parasitic thermal effects which can be mitigating by varying the repetition rate of the laser source used for excitation of hyper-Raman scattering.